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TOSHIBA TK10E60W,S1VX(S MOSFET, N-CH, 600V, 9.7A, TO-220


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3977643
Manufacturer:
     Toshiba
Manufacturer no.:
     TK10E60W,S1VX(S
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.327 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Transistor Case Style TO-220 Continuous Drain Current Id 9.7 A Operating Temperature Max 150 °C Drain Source Voltage Vds 600 V Power Dissipation 100 W Qualification - Gate Source Threshold Voltage Max 3.7 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, TOSHIBA, TK10E60W,S1VX(S, 3977643, 397-7643
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6546 Yorkshire LS12
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