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INFINEON IPB19DP10NMATMA1 MOSFET, P-CH, 100V, TO-263-3


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3873719
Manufacturer:
     Infineon
Manufacturer no.:
     IPB19DP10NMATMA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.1486 ohm Product Range OptiMOS Series MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 13.8 A Operating Temperature Max 175 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 100 V Power Dissipation 83 W Qualification - Gate Source Threshold Voltage Max 3 V SVHC No SVHC (23-Jan-2024)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, INFINEON, IPB19DP10NMATMA1, 3873719, 387-3719
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6546 Yorkshire LS12
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