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VISHAY SIHB120N60E-T5-GE3 MOSFET, N-CH, 600V, 25A, TO-263


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3605918
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB120N60E-T5-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.104 ohm Product Range E No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 25 A Operating Temperature Max 150 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 600 V Power Dissipation 179 W Qualification - Gate Source Threshold Voltage Max 5 V SVHC Lead (19-Jan-2021)
Other search terms: SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHB120N60E-T5-GE3, 3605918, 360-5918
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6546 Yorkshire LS12
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