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VISHAY SISS52DN-T1-GE3 MOSFET, N-CH, 30V, 162A, POWERPAK 1212


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3586074
Manufacturer:
     Vishay
Manufacturer no.:
     SISS52DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 950 µohm Product Range TrenchFET Gen V MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 162 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212-8S Drain Source Voltage Vds 30 V Power Dissipation 57 W Qualification - Gate Source Threshold Voltage Max 2.2 V SVHC Lead (10-Jun-2022)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISS52DN-T1-GE3, 3586074, 358-6074
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6546 Yorkshire LS12
7785
1
£ 2.00*
from £ 0.3369*
£ 0.9342*
Prices: 6546 Yorkshire LS12
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£ 0.40428
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Stock level: 6546 Yorkshire LS12
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Rights to return this item: 6546 Yorkshire LS12
This item is excluded from cancellation, exchange or return.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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