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ROHM BSM080D12P2C008 SIC MOSFET, DUAL N CHANNEL, 1.2KV, 80A


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3573215
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     BSM080D12P2C008
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage - Drain Source On State Resistance - Product Range - No. of Pins - MOSFET Module Configuration Half Bridge Channel Type Dual N Channel Transistor Case Style Module Continuous Drain Current Id 80 A Operating Temperature Max 150 °C Drain Source Voltage Vds 1.2 kV Power Dissipation 600 W Gate Source Threshold Voltage Max 4 V SVHC Lead (23-Jan-2024)
Other search terms: (SiC), Carbide, Discretes, FETs, Modules, MOSFETs, Semiconductors, Silicon, ROHM, BSM080D12P2C008, 3573215, 357-3215
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6546 Yorkshire LS12
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£ 319.16
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