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VISHAY SI3127DV-T1-GE3 MOSFET, P-CH, 60V, 5.1A, 150DEG C, 4.2W


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3470730
Manufacturer:
     Vishay
Manufacturer no.:
     SI3127DV-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.074 ohm Product Range TrenchFET No. of Pins 6 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 5.1 A Operating Temperature Max 150 °C Transistor Case Style TSOP Drain Source Voltage Vds 60 V Power Dissipation 4.2 W Qualification - Gate Source Threshold Voltage Max 3 V SVHC No SVHC (10-Jun-2022)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI3127DV-T1-GE3, 3470730, 347-0730
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6546 Yorkshire LS12
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from £ 0.1123*
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