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VISHAY SIHG80N60E-GE3 MOSFET, N-CH, 600V, 80A, 150DEG C, 520W


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3470729
Manufacturer:
     Vishay
Manufacturer no.:
     SIHG80N60E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.026 ohm Product Range E No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 80 A Operating Temperature Max 150 °C Transistor Case Style TO-247AC Drain Source Voltage Vds 600 V Power Dissipation 520 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021)
Other search terms: Transistors, power transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHG80N60E-GE3, 3470729, 347-0729
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6546 Yorkshire LS12
990
£ 2.00*
from £ 7.92*
£ 9.76*
£ 7.70*
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£ 17.45*
Prices: 6546 Yorkshire LS12
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£ 9.70
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Rights to return this item: 6546 Yorkshire LS12
This item is excluded from cancellation, exchange or return.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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