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VISHAY SI2369BDS-T1-GE3 MOSFET, P-CH, -30V, -7.5A, 2.5W


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3263505
Manufacturer:
     Vishay
Manufacturer no.:
     SI2369BDS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0225 ohm Product Range TrenchFET Gen IV MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 7.5 A Operating Temperature Max 150 °C Transistor Case Style SOT-23 Drain Source Voltage Vds 30 V Power Dissipation 2.5 W Qualification - Gate Source Threshold Voltage Max 2.2 V SVHC No SVHC (17-Jan-2023)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI2369BDS-T1-GE3, 3263505, 326-3505
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6546 Yorkshire LS12
20309
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from £ 0.1243*
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