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VISHAY SISS66DN-T1-GE3 MOSFET, N-CH+SCHOTTKY, 30V, 178.3A


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3128852
Manufacturer:
     Vishay
Manufacturer no.:
     SISS66DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.00115 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel + Schottky Continuous Drain Current Id 178.3 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 30 V Power Dissipation 65.8 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC Lead (10-Jun-2022)
Other search terms: SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISS66DN-T1-GE3, 3128852, 312-8852
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6546 Yorkshire LS12
14750
1
£ 2.00*
from £ 0.5647*
£ 1.1881*
1
£ 7.70*
from £ 0.66*
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Prices: 6546 Yorkshire LS12
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£ 0.67764
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Stock level: 6546 Yorkshire LS12
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Rights to return this item: 6546 Yorkshire LS12
This item is excluded from cancellation, exchange or return.
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