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VISHAY SIHH068N60E-T1-GE3 MOSFET, N-CH, 600V, 34A, 150DEG C, 202W


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3014142
Manufacturer:
     Vishay
Manufacturer no.:
     SIHH068N60E-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.059 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 5 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 34 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK Drain Source Voltage Vds 600 V Power Dissipation 202 W Qualification - Gate Source Threshold Voltage Max 5 V SVHC No SVHC (10-Jun-2022)
Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHH068N60E-T1-GE3, 3014142, 301-4142
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6546 Yorkshire LS12
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