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VISHAY SIDR610DP-T1-GE3 MOSFET, N-CH, 200V, 39.6A, 125W


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3014141
Manufacturer:
     Vishay
Manufacturer no.:
     SIDR610DP-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0239 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 39.6 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK SO Drain Source Voltage Vds 200 V Power Dissipation 125 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021)
Other search terms: SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIDR610DP-T1-GE3, 3014141, 301-4141
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