ONSEMI FCD4N60TM MOSFET, N-CH, 600V, 3.9A, 50W, TO-252

Rds(on) Test Voltage 10 V Drain Source On State Resistance 1 ohm Product Range SuperFET MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 3.9 A Operating Temperature Max 150 °C Transistor Case Style TO-252 (DPAK) Drain Source Voltage Vds 600 V Power Dissipation 50 W Qualification - Gate Source Threshold Voltage Max 5 V SVHC Lead (14-Jun-2023)