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VISHAY SIHU4N80E-GE3 MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2932937
Manufacturer:
     Vishay
Manufacturer no.:
     SIHU4N80E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 1.1 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 4.3 A Operating Temperature Max 150 °C Transistor Case Style TO-251 Drain Source Voltage Vds 800 V Power Dissipation 69 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHU4N80E-GE3, 2932937, 293-2937
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