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VISHAY SIHB4N80E-GE3 Rds(on) Test Voltage 10 V Drain Source On State Resistance


Quantity:  piece  
Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2932921
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB4N80E-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 1.1 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 4.3 A Operating Temperature Max 150 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 800 V Power Dissipation 69 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021)
Other search terms: SMD transistor, SMD transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHB4N80E-GE3, 2932921, 293-2921
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6546 Yorkshire LS12
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