|  |
| |
| Item number:
6546-2932918 Manufacturer no.:
SIHB11N80E-GE3 EAN/GTIN:
n/a |
| |
|
| | |
| Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.38 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 12 A Operating Temperature Max 150 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 800 V Power Dissipation 179 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021) |
| | |
| | | |
| Other search terms: SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHB11N80E-GE3, 2932918, 293-2918 |
| | |
| |