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| Item number: 6546-2932914 Manufacturer no.: SIHA2N80E-GE3 EAN/GTIN: n/a |
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| Rds(on) Test Voltage 10 V Drain Source On State Resistance 2.38 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 2.8 A Operating Temperature Max 150 °C Transistor Case Style TO-220FP Drain Source Voltage Vds 800 V Power Dissipation 29 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021) |
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| Other search terms: power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHA2N80E-GE3, 2932914, 293-2914 |
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