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VISHAY SIHA2N80E-GE3 Rds(on) Test Voltage 10 V Drain Source On State Resistance


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2932914
Manufacturer:
     Vishay
Manufacturer no.:
     SIHA2N80E-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
Transistor
Transistors
Rds(on) Test Voltage 10 V Drain Source On State Resistance 2.38 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 2.8 A Operating Temperature Max 150 °C Transistor Case Style TO-220FP Drain Source Voltage Vds 800 V Power Dissipation 29 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021)
Other search terms: power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHA2N80E-GE3, 2932914, 293-2914
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6546 Yorkshire LS12
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£ 2.00*
from £ 0.6268*
£ 1.0127*
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Prices: 6546 Yorkshire LS12
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£ 0.75216
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Rights to return this item: 6546 Yorkshire LS12
This item is excluded from cancellation, exchange or return.
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