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VISHAY SI4459BDY-T1-GE3 MOSFET, P-CH, -30V, -27.8A, SOIC


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2857064
Manufacturer:
     Vishay
Manufacturer no.:
     SI4459BDY-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0041 ohm Product Range TrenchFET Gen IV MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 27.8 A Operating Temperature Max 150 °C Transistor Case Style SOIC Drain Source Voltage Vds 30 V Power Dissipation 5.6 W Qualification - Gate Source Threshold Voltage Max 2.2 V SVHC Lead (10-Jun-2022)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI4459BDY-T1-GE3, 2857064, 285-7064
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from £ 2.2785*
  
Price is valid from 200 packets
1 packet contains 5 pieces (from £ 0.4557* per piece)
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