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VISHAY SUP50020E-GE3 Rds(on) Test Voltage 10 V Drain Source On State Resistance


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2729846
Manufacturer:
     Vishay
Manufacturer no.:
     SUP50020E-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.002 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 120 A Operating Temperature Max 175 °C Transistor Case Style TO-220AB Drain Source Voltage Vds 60 V Power Dissipation 375 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (10-Jun-2022)
Other search terms: power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SUP50020E-GE3, 2729846, 272-9846
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6546 Yorkshire LS12
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