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INFINEON IPB160N04S4H1ATMA1 MOSFET, AEC-Q101, N-CH, 40V, TO-263


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2709898
Manufacturer:
     Infineon
Manufacturer no.:
     IPB160N04S4H1ATMA1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0014 ohm Product Range OptiMOS-T2 MSL MSL 1 - Unlimited No. of Pins 7 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 160 A Operating Temperature Max 175 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 40 V Power Dissipation 167 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 3 V SVHC No SVHC (23-Jan-2024)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, INFINEON, IPB160N04S4H1ATMA1, 2709898, 270-9898
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2794 East Midlands NN17
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6546 Yorkshire LS12
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9837
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from £ 1.2535*
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