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VISHAY SI1062X-T1-GE3 Rds(on) Test Voltage 4.5 V Drain Source On State


Quantity:  pieces  
Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2679673
Manufacturer:
     Vishay
Manufacturer no.:
     SI1062X-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
power transistor
Rds(on) Test Voltage 4.5 V Drain Source On State Resistance 0.35 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 530 mA Operating Temperature Max 150 °C Transistor Case Style SC-89 Drain Source Voltage Vds 20 V Power Dissipation 220 mW Qualification - Gate Source Threshold Voltage Max 1 V SVHC No SVHC (17-Jan-2023)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI1062X-T1-GE3, 2679673, 267-9673
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from £ 0.0554*
  
Price is valid from 9,000 pieces
Orders only in multiples of 3,000 pieces
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Net
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from 3000 pieces
£ 0.0592*
£ 0.07104
per piece
from 9000 pieces
£ 0.0554*
£ 0.06648
per piece
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