Product range
My Mercateo
Sign in / Register
Basket
 
 

VISHAY SIHB12N50E-GE3 Rds(on) Test Voltage 10 V Drain Source On State


Quantity:  piece  
Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2471937
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB12N50E-GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.33 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 10.5 A Operating Temperature Max 150 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 500 V Power Dissipation 114 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (19-Jan-2021)
Other search terms: 500v mosfet, power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHB12N50E-GE3, 2471937, 247-1937
An overview of the conditions1
Delivery period
Stock level
Price
from £ 0.8622*
  
Price is valid from 1,000 pieces
Select conditions yourself
Share itemAdd item to shopping list
Staggered prices
Order quantity
Net
Gross
Unit
1 piece
£ 2.1146*
£ 2.53752
per piece
from 10 pieces
£ 1.5696*
£ 1.88352
per piece
from 100 pieces
£ 1.1445*
£ 1.3734
per piece
from 500 pieces
£ 1.09*
£ 1.308
per piece
from 1000 pieces
£ 0.8622*
£ 1.03464
per piece
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.