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INFINEON BSC109N10NS3GATMA1 Rds(on) Test Voltage 10 V Drain Source On State


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2443423
Manufacturer:
     Infineon
Manufacturer no.:
     BSC109N10NS3GATMA1
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0098 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 63 A Operating Temperature Max 150 °C Transistor Case Style TDSON Drain Source Voltage Vds 100 V Power Dissipation 78 W Qualification - Gate Source Threshold Voltage Max 2.7 V SVHC No SVHC (23-Jan-2024)
Other search terms: power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, INFINEON, BSC109N10NS3GATMA1, 2443423, 244-3423
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