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NEXPERIA PMPB215ENEA Rds(on) Test Voltage 10 V Drain Source On State Resistance


Quantity:  packet  
Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2419467
Manufacturer:
     Nexperia
Manufacturer no.:
     PMPB215ENEA
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.175 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 1.9 A Operating Temperature Max 150 °C Transistor Case Style SOT-1220 Drain Source Voltage Vds 80 V Power Dissipation 3.3 W Qualification - Gate Source Threshold Voltage Max 1.7 V SVHC No SVHC (23-Jan-2024)
Other search terms: power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, NEXPERIA, PMPB215ENEA, 2419467, 241-9467
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from £ 0.4815*
  
Price is valid from 1,000 packets
1 packet contains 5 pieces (from £ 0.0963* per piece)
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