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| Item number:
6546-2400357 Manufacturer no.:
SIHB12N65E-GE3 EAN/GTIN:
n/a |
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| Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.33 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 12 A Operating Temperature Max 150 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 650 V Power Dissipation 156 W Qualification - Gate Source Threshold Voltage Max - SVHC Lead (19-Jan-2021) |
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| Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHB12N65E-GE3, 2400357, 240-0357 |
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