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VISHAY SIHP8N50D-GE3 Rds(on) Test Voltage 10 V Drain Source On State Resistance


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2283623
Manufacturer:
     Vishay
Manufacturer no.:
     SIHP8N50D-GE3
EAN/GTIN:
     n/a
Search terms:
High load resistor
Power MOSFET
Power transistor
MOSFET
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.7 ohm Product Range D MSL - No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 8.7 A Operating Temperature Max 150 °C Transistor Case Style TO-220AB Drain Source Voltage Vds 500 V Power Dissipation 156 W Qualification - Gate Source Threshold Voltage Max 3 V SVHC To Be Advised
Other search terms: MOSFET transistor, 500v mosfet, power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHP8N50D-GE3, 2283623, 228-3623
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50
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from £ 0.741*
£ 0.987*
1
£ 7.70*
from £ 0.53*
£ 1.19*
6546 Yorkshire LS12
996
1
£ 2.00*
from £ 0.435*
£ 1.2535*
Prices: 6546 Yorkshire LS12
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£ 1.2535*
£ 1.5042
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£ 0.9614*
£ 1.15368
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£ 0.7031*
£ 0.84372
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£ 0.5963*
£ 0.71556
per piece
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£ 0.4578*
£ 0.54936
per piece
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£ 0.435*
£ 0.522
per piece
Stock level: 6546 Yorkshire LS12
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Rights to return this item: 6546 Yorkshire LS12
This item is excluded from cancellation, exchange or return.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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