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VISHAY SIHP18N50C-E3 Rds(on) Test Voltage 10 V Drain Source On State Resistance


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-1869883
Manufacturer:
     Vishay
Manufacturer no.:
     SIHP18N50C-E3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.225 ohm Product Range - MSL - No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 18 A Operating Temperature Max 150 °C Transistor Case Style TO-220 Drain Source Voltage Vds 500 V Power Dissipation 223 W Qualification - Gate Source Threshold Voltage Max 3 V SVHC To Be Advised
Other search terms: 500v mosfet, power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHP18N50C-E3, 1869883, 186-9883
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6546 Yorkshire LS12
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