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Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB


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Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Item number:
     5070-YJ4N65CZ-YAN
Manufacturer:
     YANGJIE TECHNOLOGY
Manufacturer no.:
     YJ4N65CZ
EAN/GTIN:
     n/a
Search terms:
Power transistor
Transistor
Transistors
power transistor
Manufacturer: YANGJIE TECHNOLOGY
Mounting: THT
Case: TO220AB
Drain-source voltage: 650V
Drain current: 4A
On-state resistance: 2.6Ω
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tube
Gate charge: 20nC
Heatsink thickness: max. 1.33mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
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Minimum order quantity: 3 pieces
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