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Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB


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Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Item number:
     5070-YJ10N60CZ-YAN
Manufacturer:
     YANGJIE TECHNOLOGY
Manufacturer no.:
     YJ10N60CZ
EAN/GTIN:
     n/a
Search terms:
Power transistor
power transistor
Manufacturer: YANGJIE TECHNOLOGY
Mounting: THT
Case: TO220AB
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 178W
Polarisation: unipolar
Kind of package: tube
Gate charge: 65nC
Heatsink thickness: max. 1.33mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
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