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Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.2A; Idm: -18A


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Product information
Product Image
Product Image
Item number:
     5070-SUD08P06-155L-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SUD08P06-155L-GE3
EAN/GTIN:
     n/a
Search terms:
IGBT
Power MOSFET
Power transistor
MOSFET
Manufacturer: VISHAY
Mounting: SMD
Case: DPAK;TO252
Drain-source voltage: -60V
Drain current: -8.2A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -18A
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2794 East Midlands NN17
2000
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from £ 0.316*
£ 0.316*
6546 Yorkshire LS12
3 days
1128
5
£ 2.00*
from £ 0.3434*
£ 0.69*
5070 West Midlands B46
1
£ 7.70*
from £ 0.37*
£ 1.03*
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Prices: 5070 West Midlands B46
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Stock level: 5070 West Midlands B46
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