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Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6


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Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Item number:
     5070-SSM6J501NU
Manufacturer:
     Toshiba
Manufacturer no.:
     SSM6J501NU,LF
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: TOSHIBA
Mounting: SMD
Case: uDFN6
Drain-source voltage: -20V
Drain current: -10A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Gate charge: 29.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -30A
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Minimum order quantity: 3 pieces
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