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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -44.3A; 33W


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Product information

Item number:
     5070-SIS427EDN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIS427EDN-T1-GE3
EAN/GTIN:
     n/a
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -30V
Drain current: -44.3A
On-state resistance: 21.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 66nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -110A
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