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Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -20V; 6.8W


Quantity:  packet  
Product information

Item number:
     5070-SIA811ADJ-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIA811ADJ-T1-GE3
EAN/GTIN:
     n/a
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 0.205Ω
Type of transistor: P-MOSFET + Schottky
Power dissipation: 6.8W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -8A
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from £ 696.63*
  
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1 packet contains 3,000 pieces (from £ 0.23221* per piece)
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