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Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -50A


Quantity:  packet  
Product information

Item number:
     5070-SIA477EDJT-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIA477EDJT-T1-GE3
EAN/GTIN:
     n/a
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 83nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -50A
An overview of the conditions1
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from £ 546.57*
  
Price is valid from 500 packets
1 packet contains 3,000 pieces (from £ 0.18219* per piece)
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1 packet
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£ 715.32
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£ 590.76*
£ 708.912
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£ 578.76*
£ 694.512
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£ 680.004
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£ 655.884
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