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Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8


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Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8
Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8
Item number:
     5070-SI9407BDY-T1-E3
Manufacturer:
     Vishay
Manufacturer no.:
     SI9407BDY-T1-E3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SO8
Drain-source voltage: -60V
Drain current: -4.7A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
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