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Transistor: P-MOSFET; unipolar; -100V; -28A; Idm: -40A; 53W


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Product information
Product Image
Product Image
Item number:
     5070-SI7489DP-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI7489DP-T1-GE3
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -100V
Drain current: -28A
On-state resistance: 41mΩ
Type of transistor: P-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
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