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Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.8A; Idm: -2A


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Product information

Item number:
     5070-SI7317DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI7317DN-T1-GE3
EAN/GTIN:
     n/a
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -150V
Drain current: -2.8A
On-state resistance: 1.3Ω
Type of transistor: P-MOSFET
Power dissipation: 19.8W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 9.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -2A
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