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Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A


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Product information

Item number:
     5070-SI4447DY-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI4447DY-T1-GE3
EAN/GTIN:
     n/a
Manufacturer: VISHAY
Mounting: SMD
Case: SO8
Drain-source voltage: -40V
Drain current: -4.5A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 14nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: -30A
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