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Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -50A; 0.95W; SO8


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Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -50A; 0.95W; SO8
Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -50A; 0.95W; SO8
Item number:
     5070-SI4401BDY-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI4401BDY-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SO8
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.95W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
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