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Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A


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Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A
Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A
Item number:
     5070-SI3458BDV-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI3458BDV-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: TSOP6
Drain-source voltage: 60V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 11nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
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