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Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W


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Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 10A; Idm: 40A; 85W
Item number:
     5070-P10F60HP2-5600
Manufacturer:
     SHINDENGEN
Manufacturer no.:
     P10F60HP2-5600
EAN/GTIN:
     n/a
Search terms:
Power transistor
power transistor
Manufacturer: SHINDENGEN
Mounting: THT
Case: FTO-220AG (SC91)
Drain-source voltage: 600V
Drain current: 10A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 85W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 23nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
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