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Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK


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Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Item number:
     5070-FDB024N06
Manufacturer:
     onsemi
Manufacturer no.:
     FDB024N06
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: ONSEMI
Mounting: SMD
Case: D2PAK
Drain-source voltage: 60V
Drain current: 190A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 395W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 226nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1060A
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