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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W


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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Item number:
     5070-B1M080120HK
Manufacturer:
     BASiC SEMICONDUCTOR
Manufacturer no.:
     B1M080120HK
EAN/GTIN:
     n/a
Search terms:
Power transistor
power transistor
Attention!
This product is sold up to the quantity available in stock. In case of larger orders, the amount will be replaced by the available quantity.

Manufacturer: BASiC SEMICONDUCTOR
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 149nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 80A
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