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Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max


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Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max
Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max
Item number:
     5070-APT25GN120B2DQ2G
Manufacturer:
     MICROCHIP (MICROSEMI)
Manufacturer no.:
     APT25GN120B2DQ2G
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
Manufacturer: MICROCHIP (MICROSEMI)
Mounting: THT
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 33A
Pulsed collector current: 75A
Turn-on time: 39ns
Turn-off time: 560ns
Type of transistor: IGBT
Power dissipation: 272W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 155nC
Technology: Field Stop
Other search terms: power transistor
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