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Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW


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Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW
Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW
Item number:
     5070-2SK3475
Manufacturer:
     Toshiba
Manufacturer no.:
     2SK3475(TE12L,F)
EAN/GTIN:
     n/a
Search terms:
Power transistor
Transistor
Transistors
power transistor
Manufacturer: TOSHIBA
Case: SOT89
Frequency: 520MHz
Drain-source voltage: 20V
Drain current: 1A
Type of transistor: N-MOSFET
Open-loop gain: 14.9dB
Output power: 630mW
Power dissipation: 3W
Efficiency: 45%
Polarisation: unipolar
Kind of package: tape;reel
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: depleted
Gate-source voltage: ±10V
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