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| Item number:
2794E-9201007 Manufacturer no.:
IXYH50N120C3D1 EAN/GTIN:
5059041031820 |
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| IGBT Discretes, IXYS XPT series. The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat) Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage Short circuit capability for 10usec Positive on-state voltage temperature coefficient Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes International standard and proprietary high voltage packages More information: | | Maximum Continuous Collector Current: | 90 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 625 W | Package Type: | TO-247 | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 | Switching Speed: | 50kHz | Transistor Configuration: | Single | Dimensions: | 16.26 x 5.3 x 21.46mm | Maximum Operating Temperature: | +150 °C | Minimum Operating Temperature: | -55 °C |
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| Other search terms: power transistor, 9201007, Semiconductors, Discrete Semiconductors, IGBTs, IXYS, IXYH50N120C3D1 |
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