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| Item number:
2794E-9199749 Manufacturer no.:
C2M0080120D EAN/GTIN:
5059045451785 |
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| Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ ; C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. Enhancement-mode N-channel SiC technology High Drain-Source breakdown voltages - up to 1200V Multiple devices are easy to parallel and simple to drive High speed switching with low on-resistance Latch-up resistant operation More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 31 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | TO-247 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 208 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.2V | Minimum Gate Threshold Voltage: | 1.7V | Maximum Power Dissipation: | 208 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -10 V, +25 V | Length: | 16.13mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 9199749, Semiconductors, Discrete Semiconductors, MOSFETs, Wolfspeed, C2M0080120D |
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