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| Item number: 2794E-9194729 Manufacturer no.: IRF7530TRPBF EAN/GTIN: 5059043004310 |
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| Dual N-Channel Power MOSFET, Infineon. Infineon ‘s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration. More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 5.4 A | Maximum Drain Source Voltage: | 20 V | Package Type: | MSOP | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 30 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1.2V | Minimum Gate Threshold Voltage: | 0.6V | Maximum Power Dissipation: | 1.3 W | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -12 V, +12 V | Length: | 3mm |
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| Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, 9194729, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF7530TRPBF |
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