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Infineon IKW25N120T2FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole / 8977403


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Item number:
     2794E-8977403
Manufacturer:
     Infineon
Manufacturer no.:
     IKW25N120T2FKSA1
EAN/GTIN:
     5059043741949
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
Infineon TrenchStop IGBT Transistors, 1100 to 1600V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 1100 to 1600V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
More information:
Maximum Continuous Collector Current:
50 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
349 W
Package Type:
TO-247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
16.13 x 5.21 x 21.1mm
Energy Rating:
4.3mJ
Gate Capacitance:
1600pF
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-40 °C
Other search terms: Transistor, Transistors, power transistor, 8977403, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW25N120T2FKSA1
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2794 East Midlands NN17
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6546 Yorkshire LS12
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Minimum order quantity: 2 pieces ( £ 9.664* plus VAT )
Stock level: 2794 East Midlands NN17
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Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
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