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Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole / 8977185

Quantity:

packet

Product information

Item number:
2794E-8977185

Manufacturer:
Infineon

Manufacturer no.:
IKW30N60TFKSA1

EAN/GTIN:
5059043848273

Search terms:

Fast recovery diode
Fast recovery diodes
IGBT
Power transistor

Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C

More information:


Maximum Continuous Collector Current:	45 A
Maximum Collector Emitter Voltage:	600 V
Maximum Gate Emitter Voltage:	±20V
Maximum Power Dissipation:	187 W
Package Type:	TO-247
Mounting Type:	Through Hole
Channel Type:	N
Pin Count:	3
Transistor Configuration:	Single
Dimensions:	16.13 x 5.21 x 21.1mm
Energy Rating:	2.1mJ
Gate Capacitance:	1630pF
Maximum Operating Temperature:	+175 °C
Minimum Operating Temperature:	-40 °C