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N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-3PN Toshiba TK12J60W,S1VQ(O / 8912881


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Item number:
     2794E-8912881
Manufacturer:
     Toshiba
Manufacturer no.:
     TK12J60W,S1VQ(O
EAN/GTIN:
     5059041610162
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
MOSFET N-Channel, TK1x Series, Toshiba
More information:
Channel Type:
N
Maximum Continuous Drain Current:
11.5 A
Maximum Drain Source Voltage:
600 V
Package Type:
TO-3PN
Series:
TK
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
300 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.7V
Maximum Power Dissipation:
110 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-30 V, +30 V
Length:
15.5mm
Maximum Operating Temperature:
+150 °C
Other search terms: 8912881, Semiconductors, Discrete Semiconductors, MOSFETs, Toshiba, TK12J60W,S1VQ(O
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